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| PROFET(R) BTS426L1 Smart Highside Power Switch Features * Overload protection * Current limitation * Short circuit protection * Thermal shutdown * Overvoltage protection (including load dump) * Fast demagnetization of inductive loads * Reverse battery protection1) * Undervoltage and overvoltage shutdown with auto-restart and hysteresis * Open drain diagnostic output * Open load detection in ON-state * CMOS compatible input * Loss of ground and loss of Vbb protection * Electrostatic discharge (ESD) protection Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr) TO-220AB/5 43 V 5.0 ... 34 V 60 m 7.0 A 16 A 5 5 1 Straight leads 1 5 Standard SMD * C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads * All types of resistive, inductive and capacitve loads * Replaces electromechanical relays, fuses and discrete circuits Application General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. + V bb Voltage source V Logic Voltage sensor 3 Overvoltage protection Current limit Gate protection OUT Charge pump Level shifter Rectifier Limit for unclamped ind. loads Open load Short to Vbb detection 2 IN Temperature sensor 5 ESD Logic Load 4 ST R O GND PROFET Load GND GND 1 Signal GND 1) With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Semiconductor Group 1 of 14 2003-Oct-01 BTS426L1 Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Supply voltage for full short circuit protection Tj Start=-40 ...+150C Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3)= 2 , RL= 1.7 , td= 200 ms, IN= low or high Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C, TC = 150C const. IL = 7.0 A, ZL = 24 mH, 0 : Electrostatic discharge capability (ESD) IN: (Human Body Model) all other pins: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 Symbol Vbb Vbb VLoad dump4) IL Tj Tstg Ptot EAS VESD VIN IIN IST Values 43 34 60 self-limited -40 ...+150 -55 ...+150 75 0.74 1.0 2.0 -10 ... +16 2.0 5.0 Unit V V V A C W J kV V mA Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6 Thermal Characteristics Parameter and Conditions Thermal resistance Symbol chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB5): min --Values typ --34 Unit max 1.67 75 K/W 2) 3) 4) 5) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group 2 2003-Oct-01 BTS426L1 Electrical Characteristics Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol min Values typ Unit max Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A Tj=25 C: RON Tj=150 C: Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 C Output current (pin 5) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7 Turn-on time IN to 90% VOUT: Turn-off time IN to 10% VOUT: RL = 12 , Tj =-40...+150C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150C Operating Parameters Operating voltage6) Undervoltage shutdown Undervoltage restart 5.8 IL(ISO) IL(GNDhigh) ton toff dV /dton -dV/dtoff -80 80 0.1 0.1 -50 100 7.0 -200 230 --60 120 -10 400 450 1 1 A mA s m V/s V/s Tj =-40...+150C: Vbb(on) Tj =-40...+150C: Vbb(under) Tj =-40...+25C: Vbb(u rst) Tj =+150C: Undervoltage restart of charge pump Vbb(ucp) see diagram page 12 Tj =-40...+150C: Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Vbb(under) Overvoltage shutdown Tj =-40...+150C: Vbb(over) Overvoltage restart Tj =-40...+150C: Vbb(o rst) Overvoltage hysteresis Tj =-40...+150C: Vbb(over) 7) Overvoltage protection Tj =-40...+150C: Vbb(AZ) Ibb=40 mA Standby current (pin 3) VIN=0 Tj=-40...+25C: Ibb(off) Tj= 150C: IL(off) Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 1)8), VIN=5 V, Tj =-40...+150C IGND 5.0 3.5 ---34 33 -42 ---5.6 0.2 --0.5 47 34 5.0 5.0 7.0 7.0 -43 ---- V V V V V V V V V ----- 10 12 -1.8 25 28 12 3.5 A A mA 6) 7) 8) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V See also VON(CL) in table of protection functions and circuit diagram page 7. Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group 3 2003-Oct-01 BTS426L1 Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol min IL(SCp) Tj =-40C: Tj =25C: Tj =+150C: 21 15 11 IL(SCr) -IL= 40 mA: VON(CL) Tjt 41 150 ---- Values typ Unit max Protection Functions9) Initial peak short circuit current limit (pin 3 to 5) 32 25 17 16 47 -10 -610 43 35 24 -53 --32 -- A Repetitive short circuit shutdown current limit Tj = Tjt (see timing diagrams, page 10) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 10) Reverse battery voltage drop (Vout > Vbb) IL = -4 A Diagnostic Characteristics Open load detection current (on-condition) A V C K V mV Tjt -Vbb Tj=150 C: -VON(rev) Tj=-40 C: IL (OL) Tj=25 ..150C: 20 10 2 4 --3 10 850 750 4 30 mA V k Open load detection voltage11) (off-condition) Tj=-40..150C: VOUT(OL) Internal output pull down (pin 5 to 1), VOUT=5 V, Tj=-40..150C RO 9) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 10) Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). 11) External pull up resistor required for open load detection in off state. Semiconductor Group 4 2003-Oct-01 BTS426L1 Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol min Values typ Unit max Input and Status Feedback12) Input resistance Tj=-40..150C, see circuit page 6 Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V, Tj =-40..+150C On state input current (pin 2), VIN = 3.5 V, Tj =-40..+150C RI Tj =-40..+150C: VIN(T+) Tj =-40..+150C: VIN(T-) VIN(T) IIN(off) IIN(on) td(ST OL4) td(ST) 2.5 1.7 1.5 -1 20 100 -- 3.5 --0.5 -50 520 250 6 3.5 --50 90 1000 600 k V V V A A s s Delay time for status with open load after switch off (see timing diagrams, page 11), Tj =-40..+150C Status invalid after positive input slope (open load) Tj=-40 ... +150C: Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +1.6 mA: ST low voltage Tj =-40...+25C, IST = +1.6 mA: Tj = +150C, IST = +1.6 mA: VST(high) VST(low) 5.4 --- 6.1 --- -0.4 0.6 V 12) If a ground resistor RGND is used, add the voltage drop across this resistor. Semiconductor Group 5 2003-Oct-01 BTS426L1 Truth Table Inputlevel Normal operation Open load Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level L H L H L H L H L H L H Output level L H 13) Status 425 L1 426 L1 H H H (L14)) L L15) H (L16)) H L H H H H H H H L L L L L L X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 11...12) Terms Ibb I IN 2 I ST V V bb IN V ST 4 ST GND 1 R GND IGND V OUT IN 3 Vbb IL PROFET OUT 5 VON Input circuit (ESD protection) R IN I ESD-ZD I GND I I ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). 13) 14) Power Transistor off, high impedance with external resistor between pin 3 and pin 5 15) An external short of output to V , in the off state, causes an internal current from output to ground. If R bb GND is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious. 16) Low resistance to V may be detected in ON-state by the no-load-detection bb Semiconductor Group 6 2003-Oct-01 BTS426L1 Status output +5V Open-load detection ON-state diagnostic condition: VON < RON * IL(OL); IN high + V bb R ST(ON) ST GND ESDZD ON VON ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 380 at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). OUT Logic unit Open load detection Inductive and overvoltage output clamp + V bb V Z OFF-state diagnostic condition: VOUT > 3 V typ.; IN low VON R EXT OFF OUT GND PROFET Logic unit Open load detection R O V OUT VON clamped to 47 V typ. Signal GND Overvolt. and reverse batt. protection + V bb GND disconnect V R IN IN RI Logic Z2 3 IN Vbb PROFET 4 Signal GND R ST ST 2 V Z1 PROFET GND OUT 5 R GND ST GND 1 V GND V VZ1 = 6.2 V typ., VZ2 = 47 V typ., RGND = 150 , RST= 15 k, RI= 3.5 k typ. bb V IN V ST Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. Semiconductor Group 7 2003-Oct-01 BTS426L1 GND disconnect with GND pull up 3 IN Vbb Inductive Load switch-off energy dissipation E bb E AS Vbb PROFET OUT EL ELoad 2 IN PROFET OUT 5 4 ST GND 1 = ST GND V V bb V IN ST V ZL GND { L RL ER Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Energy stored in load inductance: EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, 2 Vbb disconnect with energized inductive load 3 high 2 IN Vbb PROFET 4 ST GND 1 V OUT 5 with an approximate solution for RL > 0 : EAS= IL * L IL*RL *(Vbb + |VOUT(CL)|)* ln (1+ ) |VOUT(CL)| 2*RL bb Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150C,TC = 150C const., Vbb = 12 V, RL = 0 L [mH] 10000 Normal load current can be handled by the PROFET itself. Vbb disconnect with charged external inductive load S high 2 IN 3 Vbb PROFET 4 ST GND 1 V OUT 1000 5 D 100 bb If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. 10 1 2 7 12 17 IL [A] Semiconductor Group 8 2003-Oct-01 BTS426L1 Typ. transient thermal impedance chip case ZthJC = f(tp)ZthJC [K/W] 10 1 0.1 D= 0.5 0.2 0.1 0.05 0.02 0.01 0 0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 tp [s] Transient thermal impedance chip ambient air ZthJA = f(tp)ZthJA [K/W] 100 10 1 D= 0.5 0.2 0.1 0.05 0.02 0.01 0 0.1 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 1E2 1E3 tp [s] Semiconductor Group 9 2003-Oct-01 BTS426L1 Timing diagrams Figure 1a: Vbb turn on: Figure 2b: Switching an inductive load IN IN V bb t ST *) d(ST) V OUT V OUT ST open drain t proper turn on under all conditions IL I L(OL) t *) if the time constant of load is too large, open-load-status may occur Figure 2a: Switching a lamp, Figure 3a: Short circuit shut down by overtempertature, reset by cooling IN IN ST IL V OUT I L(SCp) IL(SCr) I L t ST t Heating up may require several milliseconds, depending on external conditions Semiconductor Group 10 2003-Oct-01 BTS426L1 Figure 4a: Overtemperature: Reset if Tj ST ST V V OUT OUT I T J normal L open normal t t td(ST OL1) = 20 s typ., td(ST OL2) = 10 s typ Figure 5a: Open load: detection in ON-state, turn on/off to open load Figure 5c: Open load: detection in ON- and OFF-state (with REXT), turn on/off to open load IN IN ST t d(ST) t d(ST OL4) ST t d(ST) V OUT V OUT I I L L open t The status delay time td(ST OL4) allows to ditinguish between the failure modes "open load" and "overtemperature". open t Semiconductor Group 11 2003-Oct-01 BTS426L1 Figure 7a: Overvoltage: Figure 6a: Undervoltage: IN IN Vbb Vbb(u cp) V bb(u rst) V ON(CL) V Vbb(over) V bb(o rst) bb V bb(under) V V OUT OUT ST ST open drain t t Figure 6b: Undervoltage restart of charge pump V on VON(CL) off-state on-state V bb(over) V bb(u rst) V bb(o rst) V V bb(under) bb(u cp) charge pump starts at Vbb(ucp) =5.6 V typ. Semiconductor Group off-state V bb 12 2003-Oct-01 BTS426L1 Package and Ordering Code All dimensions in mm Standard TO-220AB/5 BTS426L1 Ordering code Q67060-S6108-A2 SMD TO-220AB/5, Opt. E3062 BTS426L1 E3062A T&R: Ordering code Q67060-S6108-A4 TO-220AB/5, Option E3043 BTS426L1 E3043 Ordering code Q67060-S6108-A3 Changed since 04.96 Date Change Dec td(ST OL4) max reduced from 1500 1996 to 800s, typical from 400 to 320s, min limit unchanged EAS maximum rating and diagram added Zth specification added Typ. reverse battery voltage drop VON(rev) added Semiconductor Group 13 2003-Oct-01 BTS426L1 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Semiconductor Group 14 2003-Oct-01 |
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